Committees

Organizing Committee

• Masaaki Tanaka (Chair), The University of Tokyo, Japan
• Masakazu Kobayashi (Co-Chair), Waseda University, Japan
• Masataka Higashiwaki (Co-Chair), Osaka Metropolitan University and NICT, Japan
• Hajime Asahi, Osaka University, Japan
• Yoshiji Horikoshi, Waseda University, Japan
• Hiroshi Yamaguchi, NTT Basic Research Laboratory, Japan

Steering Committee

• Masaaki Tanaka (Chair), The University of Tokyo, Japan
• Masakazu Kobayashi (Co-Chair), Waseda University, Japan
• Masataka Higashiwaki (Program Committee Chair), Osaka Metropolitan University and NICT, Japan
• Shinobu Ohya (General Affairs Committee Chair), The University of Tokyo, Japan
• Wenchang Yeh (Local Arrangement Committee Chair), Shimane University, Japan
• Kohei Hamaya (Exhibition Committee Chair), Osaka University, Japan

General Affairs Committee

• Shinobu Ohya (Chair), The University of Tokyo, Japan
• Le Duc Anh, The University of Tokyo, Japan
• Pham Nam Hai, Tokyo Institute of Technology, Japan
• Masaki Kobayashi, The University of Tokyo, Japan
• Ryosho Nakane, The University of Tokyo, Japan
• Munetoshi Seki, The University of Tokyo, Japan
• Shoichi Sato, The University of Tokyo, Japan

Exhibition Committee

• Kohei Hamaya, Osaka University, Japan
• Osamu Nakatsuka, Nagoya University, Japan
• Kentarou Sawano, Tokyo City University, Japan

Program Committee

• Masataka Higashiwaki (Chair), Osaka Metropolitan University and NICT, Japan

Technical Program Subcommittee

• III-V Semiconductors
  
  Chair:
  Members: David Ritchie, University of Cambridge, UK
  Jen-Inn Chyi, National Central University, Taiwan
  Edmund Clarke, University of Sheffield, UK
  Daehwan Jung, Korea Institute of Science and Technology, South Korea
  Yoshitaka Okada, The University of Tokyo, Japan
  Stephanie Tomasulo, Navel Research Laboratory, USA
• II-VI, IV-VI, IV Semiconductors
  
  Chair:
  Members: Maria C. Tamargo, The City College of New York, USA
  Badih Assaf, University of Notre Dame, USA
  Philippe Ballet, CEA, France
  Isaac Hernandez Calderon, CINVESTAV, Mexico
  Sergey Ivanov, Ioffe Institute, Russia
  Hong Lu, Nanjing University, China
  Yong-Hang Zhang, Arizona State University, USA
• Nitrides
  
  Chair:
  Members: Debdeep Jena, Cornell University, USA
  Elaheh Ahmadi, University of California Los Angeles, USA
  Tsutomu Araki, Ritsumeikan University, Japan
  Alan Doolittle, Georgia Institute of Technology, USA
  Kazuyuki Hirama, NTT Laboratories, Japan
  Eva Monroy, CEA Grenoble, France
  Henryk Turski, Unipress, Warsaw, Poland
• Oxides
  
  Chair:
  Members: James S. Speck, University of California, Santa Barbara, USA
  Oliver Bierwagen, Paul-Drude-Institut, Germany
  Joseph Falson, California Institute of Technology, USA
  Shinobu Ohya, The University of Tokyo, Japan
  Darrell Schlom, Cornell University, USA
• Magnetic Materials and Spintronics
  
  Chair:
  Members: Kohei Hamaya, Osaka University, Japan
  Alberta Bonanni, Johannes Kepler University, Austria
  Liang He, Nanjing University, China
  Jens Herfort, Paul-Drude Institute, Germany
  Jason Kawasaki, University of Wisconsin, USA
• Quantum and Topological Materials
  
  Chair:
  Members: Shinji Kuroda, University of Tsukuba, Japan
  Alberta Bonanni, Johannes Kepler University of Linz, Austria
  Ke He, Tsinghua University, China
  Matthieu Jamet, CEA Grenoble, France
  Chris Palmstrøm, University of California, Santa Barbara, USA
  Anthony Richardella, The Pennsylvania State University, USA
  
• 2D Materials
  
  Chair:
  Members: Masaki Nakano, Shibaura Institute of Technology, Japan
  Matthias Batzill, University of South Florida, USA
  Matthieu Jamet, SPINTEC, France
  Joao Marcelo J. Lopes, Paul-Drude-Institut für Festkörperelektronik, Germany
  Miguel Moreno Ugeda, Donostia International Physics Center, Spain
  Shuolong Yang, The University of Chicago, USA
  Yi Zhang, Nanjing University, China
• Heterostructures and Nanostructures
  
  Chair:
  Members: Fumitaro Ishikawa, Hokkaido University, Japan
  Lutz Geelhaar, Paul Drude Institute, Germany
  Alvaro de Guzman Fernandez Gonzalez, Universidad Politecnica de Madrid, Spain
  Gregor Koblmuller, Walter Schottky Institut, Germany
  Minjoo Lawrence Lee. University of Illinois Urbana-Champaign, USA
  Ryan B. Lewis, McMaster University, Canada
  Takaaki Mano, National Institute for Materials Science, Japan
  Paul J. Simmonds, Tufts University, USA
• Heterogeneous Epitaxy and Integration
  
  Chair:
  Members: Eric Tournie, University of Montpellier, France
  Peter Carrington, University of Lancaster, UK
  Amit Goyal, University at Buffalo, USA
  Jinkwan Kwoen, The University of Tokyo, Japan
  Stephanie Law, Penn State University, USA
  Kunal Mukherjee, Stanford University, USA
  Guillaume Saint-Girons, CNRS Lyon, France
  Jianjun Zhang, Chinese Academy of Sciences, China
• MBE Fundamentals, Innovations, and Production
  
  Chair:
  Members: Yoriko Tominaga, Hiroshima University, Japan
  James Gupta, University of Ottawa, Canada
  Itaru Kamiya, Toyota Technological Institute, Japan
  Esperanza Luna, Paul-Drude-Institut für Festkörperelektronik, Germany
  Jiro Nishinaga, National Institute of Advanced Industrial Science and Technology (AIST), Japan
  Stefano Sanguinetti, University of Milano Bicocca, Italy
  Joshua Zide, University of Delaware, USA

International Advisory Board

• Hajime Asahi, Osaka University, Japan
• Pallab Bhattacharya, University of Michigan, USA
• Jianxin Chen, Shanghai Institute of Technical Physics, CAS, China
• Al Cho, Alcatel-Lucent Technology, USA
• Jen-Inn Chyi, National Central University, Taiwan
• Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne, Switzerland
• Mircea Guina, Tampere University, Finland
• James Gupta, University of Ottawa, Canada
• James S. Harris, Stanford University, USA
• Isaac Hernandez-Calderon, Center for Research and Advanced Studies, Mexico
• Masataka Higashiwaki, Osaka Metropolitan University and NICT, Japan
• Minghwei Hong, National Taiwan University, Taiwan
• Yoshiji Horikoshi, Waseda University, Japan
• Sergey Ivanov, Ioffe Institute, Russia
• Zuimin Jiang, Fudan University, China
• Masakazu Kobayashi, Waseda University, Japan
• Sanjay Krishna, The Ohio State University, USA
• Aizhen Li, Shanghai Institute of Microsystems and Information Technology, China
• Amy Liu, IQE Inc., USA
• Feng-Qi Liu, Institute of Semiconductors, CAS, Beijing, China
• Ted Masselink, Humboldt University, Germany
• Sergei Novikov, University of Nottingham, UK
• Henning Riechert, Paul Drude Institute, Germany
• David Ritchie, Universities of Cambridge and Swansea, UK
• Miguel Angel Sanchez, Universidad Politecnica de Madrid, Spain
• Stefano Sanguinetti, University of Milan Bicocca, Italy
• Czeslaw Skierbiszewski, High Pressure Research Center of the Polish Academy of Sciences, Poland
• Jin Dong Song, Korea Institute of Science and Technology, Korea
• Masaaki Tanaka, The University of Tokyo, Japan
• Eric Tournié, University of Montpellier, France
• Charles W. Tu, University of California, San Diego, USA
• Kang L. Wang, University of California, Los Angeles, USA
• Zbig Wasilewski, University of Waterloo, Canada
• Hiroshi Yamaguchi, NTT Basic Research Laboratory, Japan
• Yong-Hang Zhang, Arizona State University, USA