Program
Plenary Speakers
Invited Speakers
- III-V Semiconductors
Robert Richards, University of Sheffield, UK
"Valence Band Engineering for Low Noise Photodetectors Enabled Through Dilute Bismide Materials"
Adbhut Gupta, Princeton University, USA
"Elevating 2D Hole Mobilities: Breakthroughs in MBE-Grown GaAs Quantum Wells"
- II-VI, IV-VI, IV
Semiconductors
Gunther Springholz, Johannes Kepler University Lintz, Austria
"Ferroelectricity, Strain and Band Structure Engineering in IV-VI Topological Crystalline Insulator Heterostructures"
Jian-Jun Zhang, Chinese Academy of Sciences, China
"Heteroepitaxy of Nanostructures on Silicon for Qubits and Photonics"
- Nitrides
Matthew Hardy, Naval Research Laboratory, USA
"Epitaxial Growth and Characterization of High ScN Fraction ScAlN on NbN/SiC and Si"
Czeslaw Skierbiszewski, Polish Academy of Sciences, Poland
"Growth of Nitrides by MBE: Current Status, Opportunities and Challenges" - Oxides
Bharat Jalan, University of Minnesota, USA
"Unlocking the Promise and Simplicity of Atomically Precise Synthesis for 4d- and 5d Metal Oxides through Hybrid MBE"Yuki K. Wakabayashi, NTT Basic Research Laboratories, Japan
"4d and 5d magnetic oxides developed by machine-learning-assisted molecular beam epitaxy" - Magnetic Materials and Spintronics
Shingo Kaneta-Takada, The University of Tokyo, Japan
"Highly efficient spin-charge current conversion induced by band crossing in all-epitaxial spin-orbit ferromagnetic oxide heterostructures"
Joao Marcelo J. Lopes, Paul-Drude-Institut, Germany
"Above room temperature ferromagnetism in epitaxial van der Waals magnets"
- Quantum and Topological
Materials
Matthew Brahlek, Oak Ridge National Laboratory, USA
"Tailored Magnetic and Superconducting Properties in Molecular Beam Epitaxy Grown Quantum Materials"
Jin-Feng Jia, Shanghai Jiao Tong University, China
"MBE for TI/SC hetero-structure"
- 2D Materials
Phil D. C. King, University of St Andrews, UK
"Large-area MBE-grown Monolayers and van der Waals Heterostructures via Assisted Nucleation"
Yoshinori Okada, Okinawa Institute of Science and Technology, Japan
"Tunable magnetism and topological states in Cr1+dTe2 films and heterostructures"
- Heterostructures and Nanostructures
Kouichi Akahane, National Institute of Information and Communications Technology, Japan
”Wide range control of quantum dot density for optical fiber communication systems”
Eva Monroy, CEA-Grenoble, France
”Advancements in AlGaN Nanostructures for Efficient UV-C Cathodoluminescent Lamps”
- Heterogeneous Epitaxy and
Integration
Alexander A. Demkov, University of Texas, Austin, USA
"Integration of Crystalline Oxides on Si and Si-on-Insulator (SOI)"
Jean-Baptiste Rodriguez, CNRS, University of Montpellier, France
"Revisiting the epitaxy of III-Vs on group-IV substrates" - MBE Fundamentals, Innovations, and
Production
Mircea Guina, Tampere University, Finland
"MBE technology - innovating value in lasers and photovoltaics industries"
Francesco Montalenti, University of Milano-Bicocca, Italy
"Machine learning approaches for the simulation of epitaxial growth"
Topical Area
- III-V Semiconductors
- II-VI, IV-VI, IV Semiconductors
- Nitrides
- Oxides
- Magnetic Materials and Spintronics
- Quantum and Topological Materials
- 2D Materials
- Heterostructures and Nanostructures
- Heterogeneous Epitaxy and Integration
- MBE Fundamentals, Innovations, and Production