Program

Plenary Speakers

LorenPfeiffer
Loren Pfeiffer (Princeton University, USA)
“The innovations to our MBE techniques that allowed us to grow a GaAs quantum well with an electron mobility of 57 million cm2/V s.”
OliverBierwagen
Oliver Bierwagen (Paul-Drude-Institut für Festkörperelektronik, Germany)
“Surprises and Utility of the Redox Chemistry in the MBE of Oxides (– and Beyond ?)”
YoshihiroIwasa
Yoshihiro Iwasa (The University of Tokyo / RIKEN, Japan)
“Tuning magnetic and superconducting properties in MBE-grown transition metal dichalcogenides”

Invited Speakers

  • III-V Semiconductors

    Robert Richards, University of Sheffield, UK
    "Valence Band Engineering for Low Noise Photodetectors Enabled Through Dilute Bismide Materials"

    Adbhut Gupta, Princeton University, USA
    "Elevating 2D Hole Mobilities: Breakthroughs in MBE-Grown GaAs Quantum Wells"

  • II-VI, IV-VI, IV Semiconductors

    Gunther Springholz, Johannes Kepler University Lintz, Austria
    "Ferroelectricity, Strain and Band Structure Engineering in IV-VI Topological Crystalline Insulator Heterostructures"

    Jianjun Zhang, Chinese Academy of Sciences, China
    "TBA"

  • Nitrides

    Matthew Hardy, Naval Research Laboratory, USA
    "Epitaxial Growth and Characterization of High ScN Fraction ScAlN on NbN/SiC and Si"

    Czeslaw Skierbiszewski, Polish Academy of Sciences, Poland
    "Growth of Nitrides by MBE: Current Status, Opportunities and Challenges"

  • Oxides

    Bharat Jalan, University of Minnesota, USA
    "TBA"

    Yuki K. Wakabayashi, NTT Basic Research Laboratories, Japan
    "4d and 5d magnetic oxides developed by machine-learning-assisted molecular beam epitaxy"

  • Magnetic Materials and Spintronics

    Shingo Kaneta-Takada, The University of Tokyo, Japan
    "Highly efficient spin-charge current conversion induced by band crossing in all-epitaxial spin-orbit ferromagnetic oxide heterostructures"

    Joao Marcelo J. Lopes, Paul-Drude-Institut, Germany
    "Above room temperature ferromagnetism in epitaxial van der Waals magnets"

  • Quantum and Topological Materials

    Matthew Brahlek, Oak Ridge National Laboratory, USA
    "Tailored Magnetic and Superconducting Properties in Molecular Beam Epitaxy Grown Quantum Materials"

    Jin-Feng Jia, Shanghai Jiao Tong University, China
    "TBA"

  • 2D Materials

    Phil D. C. King, University of St Andrews, UK
    "Large-area MBE-grown Monolayers and van der Waals Heterostructures via Assisted Nucleation"

    Yoshinori Okada, Okinawa Institute of Science and Technology, Japan
    "Tunable magnetism and topological states in Cr1+dTe2 films and heterostructures"

  • Heterostructures and Nanostructures

    Kouichi Akahane, National Institute of Information and Communications Technology, Japan
    ”Wide range control of quantum dot density for optical fiber communication systems”

    Eva Monroy, CEA-Grenoble, France
    ”Advancements in AlGaN Nanostructures for Efficient UV-C Cathodoluminescent Lamps”

  • Heterogeneous Epitaxy and Integration

    Alexander A. Demkov, University of Texas, Austin, USA
    "Integration of Crystalline Oxides on Si and Si-on-Insulator (SOI)"

    Jean-Baptiste Rodriguez, CNRS, University of Montpellier, France
    "Revisiting the epitaxy of III-Vs on group-IV substrates"


  • MBE Fundamentals, Innovations, and Production

    Mircea Guina, Tampere University, Finland
    "MBE technology - innovating value in lasers and photovoltaics industries"

    Francesco Montalenti, University of Milano-Bicocca, Italy
    "Machine learning approaches for the simulation of epitaxial growth"

Topical Area

  • III-V Semiconductors
  • II-VI, IV-VI, IV Semiconductors
  • Nitrides
  • Oxides
  • Magnetic Materials and Spintronics
  • Quantum and Topological Materials
  • 2D Materials
  • Heterostructures and Nanostructures
  • Heterogeneous Epitaxy and Integration
  • MBE Fundamentals, Innovations, and Production